Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2110ACT(TPL3)
Manufacturer Part Number | RN2110ACT(TPL3) |
---|---|
Future Part Number | FT-RN2110ACT(TPL3) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2110ACT(TPL3) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 80mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | CST3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2110ACT(TPL3) Weight | Contact Us |
Replacement Part Number | RN2110ACT(TPL3)-FT |
RN2403,LF
Toshiba Semiconductor and Storage
RN2405,LF
Toshiba Semiconductor and Storage
RN2409,LF
Toshiba Semiconductor and Storage
RN1421TE85LF
Toshiba Semiconductor and Storage
RN1422TE85LF
Toshiba Semiconductor and Storage
RN1423TE85LF
Toshiba Semiconductor and Storage
RN1424TE85LF
Toshiba Semiconductor and Storage
RN1425TE85LF
Toshiba Semiconductor and Storage
RN1426TE85LF
Toshiba Semiconductor and Storage
RN1427TE85LF
Toshiba Semiconductor and Storage
A1415A-PQG100M
Microsemi Corporation
EX64-TQ100I
Microsemi Corporation
XC3SD3400A-4CS484LI
Xilinx Inc.
APA1000-BGG456
Microsemi Corporation
EPF10K200SFI672-2
Intel
EP3SL340F1517I4LN
Intel
XC5VLX110T-3FFG1738C
Xilinx Inc.
XC6VSX475T-1FFG1156I
Xilinx Inc.
LCMXO2-2000HE-4BG256I
Lattice Semiconductor Corporation
EP4CE55F29C8LN
Intel