Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1968FE(TE85L,F)
Manufacturer Part Number | RN1968FE(TE85L,F) |
---|---|
Future Part Number | FT-RN1968FE(TE85L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1968FE(TE85L,F) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1968FE(TE85L,F) Weight | Contact Us |
Replacement Part Number | RN1968FE(TE85L,F)-FT |
RN2610(TE85L,F)
Toshiba Semiconductor and Storage
RN4601(TE85L,F)
Toshiba Semiconductor and Storage
RN4603(TE85L,F)
Toshiba Semiconductor and Storage
RN4604(TE85L,F)
Toshiba Semiconductor and Storage
RN4607(TE85L,F)
Toshiba Semiconductor and Storage
RN4608(TE85L,F)
Toshiba Semiconductor and Storage
RN4609(TE85L,F)
Toshiba Semiconductor and Storage
RN4602TE85LF
Toshiba Semiconductor and Storage
IMB2AT110
Rohm Semiconductor
IMB3AT110
Rohm Semiconductor