Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1964TE85LF
Manufacturer Part Number | RN1964TE85LF |
---|---|
Future Part Number | FT-RN1964TE85LF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1964TE85LF Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1964TE85LF Weight | Contact Us |
Replacement Part Number | RN1964TE85LF-FT |
PBLS2002D,115
Nexperia USA Inc.
PBLS2004D,115
Nexperia USA Inc.
PBLS4003D,115
Nexperia USA Inc.
PBLS4005D,115
Nexperia USA Inc.
PBLS6002D,115
Nexperia USA Inc.
PBLS6003D,115
Nexperia USA Inc.
PBLS6004D,115
Nexperia USA Inc.
PIMH9,115
Nexperia USA Inc.
RN1602(TE85L,F)
Toshiba Semiconductor and Storage
RN1605TE85LF
Toshiba Semiconductor and Storage
XA2S150E-6FT256Q
Xilinx Inc.
XC3S4000L-4FGG900C
Xilinx Inc.
XC4020XL-3PQ208C
Xilinx Inc.
M2GL050-FGG484
Microsemi Corporation
APA1000-PQ208M
Microsemi Corporation
LCMXO1200E-3FTN256C
Lattice Semiconductor Corporation
XC7VX330T-2FF1157I
Xilinx Inc.
LFE3-17EA-7FN484C
Lattice Semiconductor Corporation
10AX115N2F45I2LG
Intel
EP3C40F324A7N
Intel