Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RJK4532DPD-00#J2
Manufacturer Part Number | RJK4532DPD-00#J2 |
---|---|
Future Part Number | FT-RJK4532DPD-00#J2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RJK4532DPD-00#J2 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 450V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 40.3W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | MP-3A |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJK4532DPD-00#J2 Weight | Contact Us |
Replacement Part Number | RJK4532DPD-00#J2-FT |
RJK1003DPP-E0#T2
Renesas Electronics America
RJK5012DPP-E0#T2
Renesas Electronics America
RJK5013DPP-E0#T2
Renesas Electronics America
RJK5014DPP-E0#T2
Renesas Electronics America
RJK5026DPP-E0#T2
Renesas Electronics America
RJK5034DPP-E0#T2
Renesas Electronics America
RJK5035DPP-E0#T2
Renesas Electronics America
RJK6006DPP-E0#T2
Renesas Electronics America
RJK6012DPP-E0#T2
Renesas Electronics America
RJK6013DPP-E0#T2
Renesas Electronics America
XCVU095-2FFVD1517I
Xilinx Inc.
AGL1000V2-FG256T
Microsemi Corporation
A42MX24-2PQ208I
Microsemi Corporation
ICE5LP4K-SWG36ITR
Lattice Semiconductor Corporation
A42MX09-1VQ100
Microsemi Corporation
10CL016YU256I7G
Intel
EP3C10F256I7
Intel
LCMXO2-7000HE-6FTG256C
Lattice Semiconductor Corporation
10AX066K1F35E1SG
Intel
EP2AGX65CU17C4
Intel