Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / RJH60D5BDPQ-E0#T2
Manufacturer Part Number | RJH60D5BDPQ-E0#T2 |
---|---|
Future Part Number | FT-RJH60D5BDPQ-E0#T2 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RJH60D5BDPQ-E0#T2 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 75A |
Current - Collector Pulsed (Icm) | - |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 37A |
Power - Max | 200W |
Switching Energy | 400µJ (on), 810µJ (off) |
Input Type | Standard |
Gate Charge | 78nC |
Td (on/off) @ 25°C | 50ns/130ns |
Test Condition | 300V, 37A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | 25ns |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RJH60D5BDPQ-E0#T2 Weight | Contact Us |
Replacement Part Number | RJH60D5BDPQ-E0#T2-FT |
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