Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / RBR2L30ATE25
Manufacturer Part Number | RBR2L30ATE25 |
---|---|
Future Part Number | FT-RBR2L30ATE25 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RBR2L30ATE25 Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 30V |
Current - Average Rectified (Io) | 2A |
Voltage - Forward (Vf) (Max) @ If | 490mV @ 2A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 80µA @ 30V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | DO-214AC, SMA |
Supplier Device Package | PMDS |
Operating Temperature - Junction | 150°C (Max) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RBR2L30ATE25 Weight | Contact Us |
Replacement Part Number | RBR2L30ATE25-FT |
RB051M-2YTR
Rohm Semiconductor
RB060M-30DDTR
Rohm Semiconductor
RB060M-30TR
Rohm Semiconductor
RB060M-40DDTR
Rohm Semiconductor
RB060M-40TR
Rohm Semiconductor
RB060M-60DDTR
Rohm Semiconductor
RB060M-60TR
Rohm Semiconductor
RB060MM-40TR
Rohm Semiconductor
RB068L-60TE25
Rohm Semiconductor
RB068M-40TR
Rohm Semiconductor
XC3SD3400A-4CS484C
Xilinx Inc.
XC2S50-6FG256C
Xilinx Inc.
M1A3P600-2FG484
Microsemi Corporation
A3P600-1FGG256
Microsemi Corporation
EP4SE360H29I3N
Intel
XC7K410T-3FFG900E
Xilinx Inc.
A42MX16-1TQG176M
Microsemi Corporation
LFE3-70EA-6FN672C
Lattice Semiconductor Corporation
EP2SGX60DF780C5N
Intel
EP1S40F1020I6N
Intel