Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / RA201836XX
Manufacturer Part Number | RA201836XX |
---|---|
Future Part Number | FT-RA201836XX |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RA201836XX Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 1800V |
Current - Average Rectified (Io) | 3600A |
Voltage - Forward (Vf) (Max) @ If | 1.15V @ 3000A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 22µs |
Current - Reverse Leakage @ Vr | 200mA @ 1800V |
Capacitance @ Vr, F | - |
Mounting Type | Chassis Mount |
Package / Case | DO-200AD |
Supplier Device Package | Pow-R-Disc |
Operating Temperature - Junction | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RA201836XX Weight | Contact Us |
Replacement Part Number | RA201836XX-FT |
BYS12-90HE3_A/H
Vishay Semiconductor Diodes Division
BYS12-90HE3_A/I
Vishay Semiconductor Diodes Division
CS1D-E3/H
Vishay Semiconductor Diodes Division
CS1G-E3/H
Vishay Semiconductor Diodes Division
CS1J-E3/H
Vishay Semiconductor Diodes Division
CS1K-E3/H
Vishay Semiconductor Diodes Division
CS1M-E3/H
Vishay Semiconductor Diodes Division
CSA2D-E3/H
Vishay Semiconductor Diodes Division
CSA2G-E3/H
Vishay Semiconductor Diodes Division
CSA2J-E3/H
Vishay Semiconductor Diodes Division
A54SX16A-1TQ144I
Microsemi Corporation
XC7A75T-3FGG484E
Xilinx Inc.
M1A3P1000L-1FGG484I
Microsemi Corporation
APA1000-CQ352M
Microsemi Corporation
EP2C8F256C8N
Intel
5SGXEBBR1H43C2L
Intel
XC2V2000-4FFG896C
Xilinx Inc.
LCMXO256E-4M100C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel
EP4SGX110HF35I3
Intel