Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / R9G02612XX
Manufacturer Part Number | R9G02612XX |
---|---|
Future Part Number | FT-R9G02612XX |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
R9G02612XX Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 2600V |
Current - Average Rectified (Io) | 1200A |
Voltage - Forward (Vf) (Max) @ If | 1.45V @ 1500A |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 25µs |
Current - Reverse Leakage @ Vr | 150mA @ 2600V |
Capacitance @ Vr, F | - |
Mounting Type | Chassis Mount |
Package / Case | DO-200AB, B-PUK |
Supplier Device Package | DO-200AB, B-PUK |
Operating Temperature - Junction | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
R9G02612XX Weight | Contact Us |
Replacement Part Number | R9G02612XX-FT |
R4220
Microsemi Corporation
R4220F
Microsemi Corporation
R4220TS
Microsemi Corporation
R4230F
Microsemi Corporation
R4230TS
Microsemi Corporation
R4240F
Microsemi Corporation
R4240TS
Microsemi Corporation
R4250F
Microsemi Corporation
R4250TS
Microsemi Corporation
R4260F
Microsemi Corporation
A54SX16A-1TQ144I
Microsemi Corporation
XC7A75T-3FGG484E
Xilinx Inc.
M1A3P1000L-1FGG484I
Microsemi Corporation
APA1000-CQ352M
Microsemi Corporation
EP2C8F256C8N
Intel
5SGXEBBR1H43C2L
Intel
XC2V2000-4FFG896C
Xilinx Inc.
LCMXO256E-4M100C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel
EP4SGX110HF35I3
Intel