Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / R6035KNZ1C9
Manufacturer Part Number | R6035KNZ1C9 |
---|---|
Future Part Number | FT-R6035KNZ1C9 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
R6035KNZ1C9 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 102 mOhm @ 18.1A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 379W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
R6035KNZ1C9 Weight | Contact Us |
Replacement Part Number | R6035KNZ1C9-FT |
ATP206-TL-H
ON Semiconductor
ATP207-S-TL-H
ON Semiconductor
ATP207-TL-H
ON Semiconductor
ATP208-TL-H
ON Semiconductor
ATP212-S-TL-H
ON Semiconductor
ATP212-TL-H
ON Semiconductor
ATP213-TL-H
ON Semiconductor
ATP214-TL-H
ON Semiconductor
ATP216-TL-H
ON Semiconductor
ATP218-TL-H
ON Semiconductor
A40MX02-VQG80M
Microsemi Corporation
EX128-PTQG64
Microsemi Corporation
5SGXEA7N1F40C2
Intel
EP4SGX530KF43C3
Intel
A40MX04-3PLG44
Microsemi Corporation
XC5VLX220T-1FFG1738I
Xilinx Inc.
LFEC6E-5F256C
Lattice Semiconductor Corporation
EPF10K50SBC356-2
Intel
EP20K60EFC324-1
Intel
EP2S60F1020C5
Intel