Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / R6020KNZ1C9
Manufacturer Part Number | R6020KNZ1C9 |
---|---|
Future Part Number | FT-R6020KNZ1C9 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
R6020KNZ1C9 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 196 mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1550pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 231W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
R6020KNZ1C9 Weight | Contact Us |
Replacement Part Number | R6020KNZ1C9-FT |
NVATS5A112PLZT4G
ON Semiconductor
ATP103-TL-H
ON Semiconductor
ATP108-TL-H
ON Semiconductor
ATP112-TL-H
ON Semiconductor
ATP202-TL-H
ON Semiconductor
NVATS5A106PLZT4G
ON Semiconductor
ATP102-TL-H
ON Semiconductor
ATP107-TL-H
ON Semiconductor
ATP201-TL-H
ON Semiconductor
ATP201-V-TL-H
ON Semiconductor
XC3S50-4TQG144I
Xilinx Inc.
XC3S5000-4FGG676I
Xilinx Inc.
XC6SLX25-L1FG484I
Xilinx Inc.
A54SX16A-1FG256
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
AT6005LV-4AC
Microchip Technology
EP3SL200H780I4L
Intel
LFEC6E-3Q208I
Lattice Semiconductor Corporation
LFXP2-17E-6F484C
Lattice Semiconductor Corporation
10AX066K2F40E2LG
Intel