Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / QSH29TR
Manufacturer Part Number | QSH29TR |
---|---|
Future Part Number | FT-QSH29TR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
QSH29TR Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 70V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 200mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 100mA |
Current - Collector Cutoff (Max) | 500nA (ICBO) |
Frequency - Transition | - |
Power - Max | 1.25W |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | TSMT6 (SC-95) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
QSH29TR Weight | Contact Us |
Replacement Part Number | QSH29TR-FT |
RN2712JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2713JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN1705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2701JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2703JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2704JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2705JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2707JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2708JE(TE85L,F)
Toshiba Semiconductor and Storage
XC4005E-2TQ144C
Xilinx Inc.
XCS30XL-4VQ100C
Xilinx Inc.
XC2V1000-5FGG456I
Xilinx Inc.
XCKU025-1FFVA1156C
Xilinx Inc.
XA3S1600E-4FGG484Q
Xilinx Inc.
A3PE3000L-FGG484M
Microsemi Corporation
A3P030-2VQ100I
Microsemi Corporation
AGLN250V5-VQG100
Microsemi Corporation
5SGXMA5H3F35C2N
Intel
A40MX04-2PQG100
Microsemi Corporation