Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / QJD1210010
Manufacturer Part Number | QJD1210010 |
---|---|
Future Part Number | FT-QJD1210010 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
QJD1210010 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id | 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 500nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 10200pF @ 800V |
Power - Max | 1080W |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
QJD1210010 Weight | Contact Us |
Replacement Part Number | QJD1210010-FT |
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