Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / QID1210006
Manufacturer Part Number | QID1210006 |
---|---|
Future Part Number | FT-QID1210006 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
QID1210006 Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | - |
Configuration | 2 Independent |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 100A |
Power - Max | 570W |
Vce(on) (Max) @ Vge, Ic | 6.5V @ 15V, 100A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 16nF @ 10V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
QID1210006 Weight | Contact Us |
Replacement Part Number | QID1210006-FT |
MII400-12E4
IXYS
MIO1200-25E10
IXYS
MIO1200-33E10
IXYS
MIO1200-33E11
IXYS
MIO1500-25E10
IXYS
MIO1800-17E10
IXYS
MIO2400-17E10
IXYS
MIO600-65E11
IXYS
MITA10WB1200TMH
IXYS
MITA15WB1200TMH
IXYS
XC4005E-3PQ100I
Xilinx Inc.
XC2V250-6FGG456C
Xilinx Inc.
AGLN250V2-ZCSG81
Microsemi Corporation
M1A3PE3000-PQG208I
Microsemi Corporation
10AX016C4U19E3LG
Intel
10M50DAF484I6G
Intel
EP4CE22F17C8
Intel
LCMXO640E-3BN256I
Lattice Semiconductor Corporation
EP2AGX190EF29I5G
Intel
EP4SGX110FF35C4
Intel