Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PUMH14,115
Manufacturer Part Number | PUMH14,115 |
---|---|
Future Part Number | FT-PUMH14,115 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PUMH14,115 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | 6-TSSOP |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PUMH14,115 Weight | Contact Us |
Replacement Part Number | PUMH14,115-FT |
DDA143TU-7
Diodes Incorporated
DDA144EU-7
Diodes Incorporated
DDC114EU-7
Diodes Incorporated
DDC114TU-7
Diodes Incorporated
DDC114YU-7
Diodes Incorporated
DDC123JU-7
Diodes Incorporated
DDC124EU-7
Diodes Incorporated
DDC143TU-7
Diodes Incorporated
DDC144EU-7
Diodes Incorporated
PRMD10Z
Nexperia USA Inc.
M2GL090-FG484
Microsemi Corporation
AGL600V5-FGG256
Microsemi Corporation
EP3C16E144I7N
Intel
5SGXEA7H2F35I3LN
Intel
LFE2-35E-6F672I
Lattice Semiconductor Corporation
LCMXO640E-5MN132C
Lattice Semiconductor Corporation
5CEBA7U19C7N
Intel
10AX066H4F34I3LG
Intel
10AX115N3F40I2SGE2
Intel
EP2SGX130GF40C4ES
Intel