Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / PQMD3Z
Manufacturer Part Number | PQMD3Z |
---|---|
Future Part Number | FT-PQMD3Z |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
PQMD3Z Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 230MHz, 180MHz |
Power - Max | 230mW |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Supplier Device Package | DFN1010B-6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PQMD3Z Weight | Contact Us |
Replacement Part Number | PQMD3Z-FT |
MUN5334DW1T1G
ON Semiconductor
NSB13211DW6T1G
ON Semiconductor
NSM11156DW6T1G
ON Semiconductor
NSM21156DW6T1G
ON Semiconductor
NSM21356DW6T1G
ON Semiconductor
NSM46211DW6T1G
ON Semiconductor
NSTB60BDW1T1
ON Semiconductor
NSB1706DMW5T1G
ON Semiconductor
NSVUMC2NT1G
ON Semiconductor
UMC3NT1G
ON Semiconductor
LCMXO2-2000ZE-3TG100I
Lattice Semiconductor Corporation
LCMXO640C-3T100C
Lattice Semiconductor Corporation
XC2VP4-6FGG256I
Xilinx Inc.
XCS10-3VQ100C
Xilinx Inc.
P1AFS1500-2FG484I
Microsemi Corporation
EP1K100FC256-2N
Intel
5SGSMD6K2F40I3LN
Intel
EP3SL200F1152I4L
Intel
EP1S30F780C7N
Intel
EP2S90F1020C5N
Intel