Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / PMBT5551,215
Manufacturer Part Number | PMBT5551,215 |
---|---|
Future Part Number | FT-PMBT5551,215 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
PMBT5551,215 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 300mA |
Voltage - Collector Emitter Breakdown (Max) | 160V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Power - Max | 250mW |
Frequency - Transition | 300MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PMBT5551,215 Weight | Contact Us |
Replacement Part Number | PMBT5551,215-FT |
BC846B,235
Nexperia USA Inc.
BC846B/SNR
Nexperia USA Inc.
BC846B/SNVL
Nexperia USA Inc.
BC847,235
Nexperia USA Inc.
BC847A,235
Nexperia USA Inc.
BC847A/SNR
Nexperia USA Inc.
BC847A/SNVL
Nexperia USA Inc.
BC847B,215
Nexperia USA Inc.
BC847B/SNR
Nexperia USA Inc.
BC847B/SNVL
Nexperia USA Inc.
XC4005XL-3TQ144C
Xilinx Inc.
ICE40LM1K-SWG25TR1K
Lattice Semiconductor Corporation
A3PN125-VQG100I
Microsemi Corporation
A3P060-1VQG100I
Microsemi Corporation
5CEFA7F27C6N
Intel
EP4CE6E22I8LN
Intel
5CGXFC5F6M11C6N
Intel
EP3SL110F1152C4LN
Intel
5AGXBB3D4F35I5G
Intel
5AGXFA7H4F35I3N
Intel