Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PHD23NQ10T,118
Manufacturer Part Number | PHD23NQ10T,118 |
---|---|
Future Part Number | FT-PHD23NQ10T,118 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | TrenchMOS™ |
PHD23NQ10T,118 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1187pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PHD23NQ10T,118 Weight | Contact Us |
Replacement Part Number | PHD23NQ10T,118-FT |
BUK9E1R9-40E,127
NXP USA Inc.
BUK9E2R3-40E,127
NXP USA Inc.
BUK9E2R8-60E,127
NXP USA Inc.
BUK9E3R2-40B,127
NXP USA Inc.
BUK9E3R2-40E,127
NXP USA Inc.
BUK9E3R7-60E,127
NXP USA Inc.
BUK9E4R4-40B,127
NXP USA Inc.
BUK9E4R4-80E,127
NXP USA Inc.
BUK9E4R9-60E,127
NXP USA Inc.
BUK9E6R1-100E,127
NXP USA Inc.
A1010B-2VQ80I
Microsemi Corporation
EPF10K30ATC144-1
Intel
XC3S500E-4PQ208I
Xilinx Inc.
AFS090-2FG256I
Microsemi Corporation
AGL1000V5-FGG256I
Microsemi Corporation
LCMXO3L-4300C-5BG324I
Lattice Semiconductor Corporation
EP2C20F484C6
Intel
10AX022E3F29I2LG
Intel
5CGXBC9A7U19C8N
Intel
EP4CE75F29C8
Intel