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PHD22NQ20T,118 Image

NXP USA Inc. PHD22NQ20T,118

MFG Part Number
PHD22NQ20T,118
Available Quantity
53610 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
NXP USA Inc.
Brief Description
TrenchMOS™ MOSFET N-CH 200V 21.1A DPAK
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
PHD22NQ20T,118.pdf
PHD22NQ20T,118 Image

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PHD22NQ20T,118 Specifications

Manufacturer Part Number PHD22NQ20T,118
Future Part Number FT-PHD22NQ20T,118
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series TrenchMOS™
PHD22NQ20T,118 Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 21.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
PHD22NQ20T,118 Weight Contact Us
Replacement Part Number PHD22NQ20T,118-FT

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