Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTD123EQAZ
Manufacturer Part Number | PDTD123EQAZ |
---|---|
Future Part Number | FT-PDTD123EQAZ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
PDTD123EQAZ Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 210MHz |
Power - Max | 325mW |
Mounting Type | Surface Mount |
Package / Case | 3-XDFN Exposed Pad |
Supplier Device Package | DFN1010D-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTD123EQAZ Weight | Contact Us |
Replacement Part Number | PDTD123EQAZ-FT |
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