Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTD114ETVL
Manufacturer Part Number | PDTD114ETVL |
---|---|
Future Part Number | FT-PDTD114ETVL |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PDTD114ETVL Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 225MHz |
Power - Max | 320mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTD114ETVL Weight | Contact Us |
Replacement Part Number | PDTD114ETVL-FT |
PDTD114EUX
Nexperia USA Inc.
PDTD123EUF
Nexperia USA Inc.
PDTD123EUX
Nexperia USA Inc.
PDTD123YUF
Nexperia USA Inc.
PDTD123YUX
Nexperia USA Inc.
PDTD143EUF
Nexperia USA Inc.
PDTD143EUX
Nexperia USA Inc.
PDTD143XUF
Nexperia USA Inc.
PDTD143XUX
Nexperia USA Inc.
PDTC123JT,215
Nexperia USA Inc.
EP1C6T144C8
Intel
EPF6016ATC144-1N
Intel
LCMXO1200C-4T100C
Lattice Semiconductor Corporation
XC4013E-3BG225I
Xilinx Inc.
M1A3P1000-1FG256
Microsemi Corporation
APA300-PQ208A
Microsemi Corporation
EP4CGX150CF23I7
Intel
EP2AGZ350HF40I4N
Intel
XC7VX690T-L2FFG1930E
Xilinx Inc.
EPF8820AQC208-3
Intel