Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTD114ETR
Manufacturer Part Number | PDTD114ETR |
---|---|
Future Part Number | FT-PDTD114ETR |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PDTD114ETR Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 225MHz |
Power - Max | 320mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTD114ETR Weight | Contact Us |
Replacement Part Number | PDTD114ETR-FT |
PDTD114EUF
Nexperia USA Inc.
PDTD114EUX
Nexperia USA Inc.
PDTD123EUF
Nexperia USA Inc.
PDTD123EUX
Nexperia USA Inc.
PDTD123YUF
Nexperia USA Inc.
PDTD123YUX
Nexperia USA Inc.
PDTD143EUF
Nexperia USA Inc.
PDTD143EUX
Nexperia USA Inc.
PDTD143XUF
Nexperia USA Inc.
PDTD143XUX
Nexperia USA Inc.
XC6SLX45T-3CSG484I
Xilinx Inc.
XC6SLX100T-3FG900C
Xilinx Inc.
XCS10-3VQ100C
Xilinx Inc.
XC6VLX130T-1FFG484C
Xilinx Inc.
APA750-PQ208I
Microsemi Corporation
A3P250L-1VQG100I
Microsemi Corporation
EP2C5AF256I8N
Intel
AGL1000V5-FGG144I
Microsemi Corporation
LFE2M50E-5FN672I
Lattice Semiconductor Corporation
EP1S60F1020I6N
Intel