Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTD113ZQAZ
Manufacturer Part Number | PDTD113ZQAZ |
---|---|
Future Part Number | FT-PDTD113ZQAZ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
PDTD113ZQAZ Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 210MHz |
Power - Max | 325mW |
Mounting Type | Surface Mount |
Package / Case | 3-XDFN Exposed Pad |
Supplier Device Package | DFN1010D-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTD113ZQAZ Weight | Contact Us |
Replacement Part Number | PDTD113ZQAZ-FT |
PDTA124EE,115
NXP USA Inc.
PDTA124TE,115
NXP USA Inc.
PDTA124XE,115
NXP USA Inc.
PDTA143EE,115
NXP USA Inc.
PDTA143TE,115
NXP USA Inc.
PDTA143XE,115
NXP USA Inc.
PDTA143XE,135
NXP USA Inc.
PDTA143ZE,115
NXP USA Inc.
PDTA144EE,115
NXP USA Inc.
PDTA144TE,115
NXP USA Inc.
XC7A35T-2CSG325I
Xilinx Inc.
10CX150YF672E6G
Intel
5SGSMD5H2F35I3LN
Intel
5SGXMA3K3F35I3N
Intel
5SGXMA4K3F35I3
Intel
XC2V4000-5FF1152I
Xilinx Inc.
LFE3-17EA-8LMG328I
Lattice Semiconductor Corporation
LFE2-20E-5F484C
Lattice Semiconductor Corporation
LCMXO2-4000HE-4BG256C
Lattice Semiconductor Corporation
EP2AGX260FF35I5G
Intel