Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTC143XQAZ
Manufacturer Part Number | PDTC143XQAZ |
---|---|
Future Part Number | FT-PDTC143XQAZ |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
PDTC143XQAZ Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | 230MHz |
Power - Max | 280mW |
Mounting Type | Surface Mount |
Package / Case | 3-XDFN Exposed Pad |
Supplier Device Package | DFN1010D-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTC143XQAZ Weight | Contact Us |
Replacement Part Number | PDTC143XQAZ-FT |
PDTA123EE,115
NXP USA Inc.
PDTA123JE,115
NXP USA Inc.
PDTA123TE,115
NXP USA Inc.
PDTA123YE,115
NXP USA Inc.
PDTA124EE,115
NXP USA Inc.
PDTA124TE,115
NXP USA Inc.
PDTA124XE,115
NXP USA Inc.
PDTA143EE,115
NXP USA Inc.
PDTA143TE,115
NXP USA Inc.
PDTA143XE,115
NXP USA Inc.