Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTB113ET,215
Manufacturer Part Number | PDTB113ET,215 |
---|---|
Future Part Number | FT-PDTB113ET,215 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PDTB113ET,215 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | TO-236AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTB113ET,215 Weight | Contact Us |
Replacement Part Number | PDTB113ET,215-FT |
PDTB123EUF
Nexperia USA Inc.
PDTB123EUX
Nexperia USA Inc.
PDTB123YUF
Nexperia USA Inc.
PDTB123YUX
Nexperia USA Inc.
PDTB143EUF
Nexperia USA Inc.
PDTB143EUX
Nexperia USA Inc.
PDTB143XUF
Nexperia USA Inc.
PDTB143XUX
Nexperia USA Inc.
PDTC114EU,135
Nexperia USA Inc.
PDTC114YU,115
Nexperia USA Inc.
XA2S50E-6TQ144I
Xilinx Inc.
XC6SLX100T-2FGG676I
Xilinx Inc.
XCKU025-2FFVA1156I
Xilinx Inc.
5SGXMA5K3F35C4N
Intel
LFXP2-17E-5QN208C
Lattice Semiconductor Corporation
LCMXO2-4000ZE-3BG332C
Lattice Semiconductor Corporation
10AX057K2F40I1SG
Intel
5AGXFB3H4F35I3G
Intel
EP3SL70F780C3N
Intel
5SGXMA3H3F35I3N
Intel