Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTB113EK,115
Manufacturer Part Number | PDTB113EK,115 |
---|---|
Future Part Number | FT-PDTB113EK,115 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PDTB113EK,115 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SMT3; MPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTB113EK,115 Weight | Contact Us |
Replacement Part Number | PDTB113EK,115-FT |
BCR148E6393HTSA1
Infineon Technologies
BCR148E6433HTMA1
Infineon Technologies
BCR162E6327HTSA1
Infineon Technologies
BCR166B6327HTLA1
Infineon Technologies
BCR166E6327HTSA1
Infineon Technologies
BCR166E6433HTMA1
Infineon Technologies
BCR169E6327HTSA1
Infineon Technologies
BCR183E6359HTMA1
Infineon Technologies
BCR183E6433HTMA1
Infineon Technologies
BCR185E6327HTSA1
Infineon Technologies
XC6SLX4-L1TQG144I
Xilinx Inc.
XC2S30-5VQ100I
Xilinx Inc.
XC6SLX25-N3FGG484I
Xilinx Inc.
APA600-FG484
Microsemi Corporation
APA450-FG256
Microsemi Corporation
EP20K30EFC144-3
Intel
5AGZME1E3H29I4N
Intel
XA6SLX9-2CSG225Q
Xilinx Inc.
LFE3-35EA-7FN672C
Lattice Semiconductor Corporation
EP1S80F1020I7N
Intel