Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / PDTA115EM,315
Manufacturer Part Number | PDTA115EM,315 |
---|---|
Future Part Number | FT-PDTA115EM,315 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
PDTA115EM,315 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 20mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 100 kOhms |
Resistor - Emitter Base (R2) | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | SC-101, SOT-883 |
Supplier Device Package | DFN1006-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
PDTA115EM,315 Weight | Contact Us |
Replacement Part Number | PDTA115EM,315-FT |
MUN5115T1
ON Semiconductor
MUN5116T1
ON Semiconductor
MUN5131T1
ON Semiconductor
MUN5135T1
ON Semiconductor
MUN5136T1
ON Semiconductor
MUN5137T1
ON Semiconductor
MUN5214T1
ON Semiconductor
MUN5215T1
ON Semiconductor
MUN5216T1
ON Semiconductor
MUN5231T1
ON Semiconductor
A3P015-2QNG68
Microsemi Corporation
XA2S100E-6TQ144Q
Xilinx Inc.
LCMXO640C-3TN144C
Lattice Semiconductor Corporation
A3P125-2TQG144I
Microsemi Corporation
M1A3P250-2VQ100
Microsemi Corporation
EP2C35U484I8N
Intel
XCS10-4PC84C
Xilinx Inc.
XA7A15T-2CSG324I
Xilinx Inc.
LFXP3E-3Q208C
Lattice Semiconductor Corporation
EP1S10F780C6
Intel