Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NVMSD6N303R2G
Manufacturer Part Number | NVMSD6N303R2G |
---|---|
Future Part Number | FT-NVMSD6N303R2G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NVMSD6N303R2G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 32 mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 24V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVMSD6N303R2G Weight | Contact Us |
Replacement Part Number | NVMSD6N303R2G-FT |
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