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ON Semiconductor NVD5867NLT4G-TB01

Name: NVD5867NLT4G-TB01
Brand: ON Semiconductor
SKU: NVD5867NLT4G-TB01
Availability: InStock
Rating: 4.9 (273 reviews)

MFG Part Number: NVD5867NLT4G-TB01

Available Quantity: 83930 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: ON Semiconductor

Brief Description: Automotive, AEC-Q101 MOSFET N-CH 60V 22A DPAK DPAK

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: NVD5867NLT4G-TB01.pdf

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NVD5867NLT4G-TB01 Specifications

Manufacturer Part Number	NVD5867NLT4G-TB01
Future Part Number	FT-NVD5867NLT4G-TB01
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101
NVD5867NLT4G-TB01 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	39 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	675pF @ 25V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 43W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
NVD5867NLT4G-TB01 Weight	Contact Us
Replacement Part Number	NVD5867NLT4G-TB01-FT

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