Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NTD4960N-1G
Manufacturer Part Number | NTD4960N-1G |
---|---|
Future Part Number | FT-NTD4960N-1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NTD4960N-1G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.9A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 1.07W (Ta), 35.71W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NTD4960N-1G Weight | Contact Us |
Replacement Part Number | NTD4960N-1G-FT |
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