Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSVMMUN2135LT1G
Manufacturer Part Number | NSVMMUN2135LT1G |
---|---|
Future Part Number | FT-NSVMMUN2135LT1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
NSVMMUN2135LT1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVMMUN2135LT1G Weight | Contact Us |
Replacement Part Number | NSVMMUN2135LT1G-FT |
SMMUN2134LT1G
ON Semiconductor
MMUN2135LT1G
ON Semiconductor
MUN2215T1G
ON Semiconductor
MMUN2134LT1G
ON Semiconductor
SMUN2216T1G
ON Semiconductor
SMMUN2211LT3G
ON Semiconductor
MMUN2233LT1G
ON Semiconductor
MUN2235T1G
ON Semiconductor
NSVMMUN2131LT1G
ON Semiconductor
MMUN2211LT1G
ON Semiconductor
XCV300E-7FG456C
Xilinx Inc.
A3P600-2FGG484
Microsemi Corporation
EP4CGX50CF23C8
Intel
5SGSMD4E1H29C1N
Intel
10CL006YE144I7G
Intel
5SGXMA7N3F45I3N
Intel
A1020B-2PLG44C
Microsemi Corporation
LFE2-50SE-6F484C
Lattice Semiconductor Corporation
LCMXO2-2000ZE-3BG256C
Lattice Semiconductor Corporation
LCMXO2-1200HC-5MG132I
Lattice Semiconductor Corporation