Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSVMMUN2132LT1G
Manufacturer Part Number | NSVMMUN2132LT1G |
---|---|
Future Part Number | FT-NSVMMUN2132LT1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSVMMUN2132LT1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 246mW |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSVMMUN2132LT1G Weight | Contact Us |
Replacement Part Number | NSVMMUN2132LT1G-FT |
MMUN2113LT3G
ON Semiconductor
MMUN2115LT1G
ON Semiconductor
MMUN2137LT1G
ON Semiconductor
MMUN2138LT1G
ON Semiconductor
MMUN2216LT1G
ON Semiconductor
MMUN2234LT1G
ON Semiconductor
MMUN2237LT1G
ON Semiconductor
MUN2212T1G
ON Semiconductor
MUN2216T1G
ON Semiconductor
MUN2234T1G
ON Semiconductor
EX64-TQG64I
Microsemi Corporation
XCVU080-2FFVD1517I
Xilinx Inc.
A3PN030-Z2QNG48
Microsemi Corporation
A42MX36-1CQ256M
Microsemi Corporation
A3PN060-1VQ100I
Microsemi Corporation
EP3SE50F484C4L
Intel
5SGXMB5R2F43C2LN
Intel
XCV50-5BG256I
Xilinx Inc.
APA150-TQ100
Microsemi Corporation
5AGXFA7H4F35C4N
Intel