Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / NSV40501UW3T2G
Manufacturer Part Number | NSV40501UW3T2G |
---|---|
Future Part Number | FT-NSV40501UW3T2G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSV40501UW3T2G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 400mA, 4A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2A, 2V |
Power - Max | 875mW |
Frequency - Transition | 150MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-WDFN Exposed Pad |
Supplier Device Package | 3-WDFN (2x2) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSV40501UW3T2G Weight | Contact Us |
Replacement Part Number | NSV40501UW3T2G-FT |
2N5868
Microsemi Corporation
2N5872
Microsemi Corporation
2N5874
Microsemi Corporation
2N5875
Microsemi Corporation
2N5876
Microsemi Corporation
2N5877
Microsemi Corporation
2N5879
Microsemi Corporation
2N5880
Microsemi Corporation
2N5883
Microsemi Corporation
2N5886
Microsemi Corporation
XC7A35T-1FTG256I
Xilinx Inc.
LFE5U-12F-7BG381I
Lattice Semiconductor Corporation
A40MX04-3PL68I
Microsemi Corporation
EP3C5U256C6N
Intel
EP1K30FC256-1N
Intel
10M50DCF672C7G
Intel
XA6SLX4-2CSG225Q
Xilinx Inc.
ICE40LP1K-CM36
Lattice Semiconductor Corporation
10AX048E2F29I1SG
Intel
EP4SGX70HF35C4N
Intel