Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / NSV20101JT1G
Manufacturer Part Number | NSV20101JT1G |
---|---|
Future Part Number | FT-NSV20101JT1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSV20101JT1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 20V |
Vce Saturation (Max) @ Ib, Ic | 220mV @ 100mA, 1A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
Power - Max | 255mW |
Frequency - Transition | 350MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-89, SOT-490 |
Supplier Device Package | SC-89-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSV20101JT1G Weight | Contact Us |
Replacement Part Number | NSV20101JT1G-FT |
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