Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / NST857BDP6T5G
Manufacturer Part Number | NST857BDP6T5G |
---|---|
Future Part Number | FT-NST857BDP6T5G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NST857BDP6T5G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
Power - Max | 350mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-963 |
Supplier Device Package | SOT-963 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NST857BDP6T5G Weight | Contact Us |
Replacement Part Number | NST857BDP6T5G-FT |
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