Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSBC115EPDXV6T1G
Manufacturer Part Number | NSBC115EPDXV6T1G |
---|---|
Future Part Number | FT-NSBC115EPDXV6T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
NSBC115EPDXV6T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 100 kOhms |
Resistor - Emitter Base (R2) | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 357mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBC115EPDXV6T1G Weight | Contact Us |
Replacement Part Number | NSBC115EPDXV6T1G-FT |
PRMH13Z
Nexperia USA Inc.
PUMD3,115
Nexperia USA Inc.
PUMD9,115
Nexperia USA Inc.
PUMD12,115
Nexperia USA Inc.
PUMD16,115
Nexperia USA Inc.
PUMH2,115
Nexperia USA Inc.
PUMD2,115
Nexperia USA Inc.
PUMB2,115
Nexperia USA Inc.
PUMH13,115
Nexperia USA Inc.
PUMH7,115
Nexperia USA Inc.
AT6002ALV-4AC
Microchip Technology
EP1K50TC144-3
Intel
LFXP3E-3T144C
Lattice Semiconductor Corporation
A3PN060-Z1VQG100
Microsemi Corporation
5SGXEB5R2F43I3LN
Intel
XC7K410T-3FBG900E
Xilinx Inc.
XC7A75T-2CSG324I
Xilinx Inc.
A54SX32A-FGG144I
Microsemi Corporation
LFE3-150EA-6LFN1156I
Lattice Semiconductor Corporation
EP2S90F1508C5N
Intel