Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSBC114YPDXV6T1
Manufacturer Part Number | NSBC114YPDXV6T1 |
---|---|
Future Part Number | FT-NSBC114YPDXV6T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSBC114YPDXV6T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBC114YPDXV6T1 Weight | Contact Us |
Replacement Part Number | NSBC114YPDXV6T1-FT |
NSBA114TDP6T5G
ON Semiconductor
NSBC114TDP6T5G
ON Semiconductor
NSBC114YDP6T5G
ON Semiconductor
NSBC144EDP6T5G
ON Semiconductor
NSBC144EPDP6T5G
ON Semiconductor
NSBC124EPDP6T5G
ON Semiconductor
NSBA144EDP6T5G
ON Semiconductor
NSBC123TPDP6T5G
ON Semiconductor
NSBC143EPDP6T5G
ON Semiconductor
NSBC144WPDP6T5G
ON Semiconductor
LCMXO1200C-3T144I
Lattice Semiconductor Corporation
AX125-FG256
Microsemi Corporation
5CGXFC9D6F27C7N
Intel
5SGXEA7N2F40C1
Intel
5SGXEA7H1F35I2N
Intel
XC5VLX50T-1FF665C
Xilinx Inc.
XC7K355T-1FF901I
Xilinx Inc.
LFE2M20SE-6F256C
Lattice Semiconductor Corporation
5CEFA5M13C8N
Intel
EP2A40F1020C8
Intel