Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / NSBA123TF3T5G
Manufacturer Part Number | NSBA123TF3T5G |
---|---|
Future Part Number | FT-NSBA123TF3T5G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSBA123TF3T5G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 254mW |
Mounting Type | Surface Mount |
Package / Case | SOT-1123 |
Supplier Device Package | SOT-1123 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBA123TF3T5G Weight | Contact Us |
Replacement Part Number | NSBA123TF3T5G-FT |
NSVMMUN2232LT1G
ON Semiconductor
SMMUN2214LT1G
ON Semiconductor
MMUN2116LT1G
ON Semiconductor
SMMUN2213LT1G
ON Semiconductor
MMUN2112LT1G
ON Semiconductor
MUN2213T1G
ON Semiconductor
NSVMMUN2212LT1G
ON Semiconductor
SMMUN2113LT1G
ON Semiconductor
SMMUN2114LT1G
ON Semiconductor
SMUN2114T1G
ON Semiconductor
LCMXO2-1200HC-6TG144IR1
Lattice Semiconductor Corporation
XC7A15T-1FTG256C
Xilinx Inc.
XC2VP2-6FGG256I
Xilinx Inc.
5SGSMD6K1F40C2LN
Intel
EP3SL200F1517C3
Intel
XC6VHX380T-1FFG1924I
Xilinx Inc.
XC4VFX100-10FF1152I
Xilinx Inc.
A3P060-1FGG144I
Microsemi Corporation
LCMXO256E-4M100I
Lattice Semiconductor Corporation
LFE3-70E-7FN672C
Lattice Semiconductor Corporation