Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / NJVMJD117T4G
Manufacturer Part Number | NJVMJD117T4G |
---|---|
Future Part Number | FT-NJVMJD117T4G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NJVMJD117T4G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 1.75W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NJVMJD117T4G Weight | Contact Us |
Replacement Part Number | NJVMJD117T4G-FT |
MMBT4401WT1
ON Semiconductor
MMBTA06WT1
ON Semiconductor
MMBTA56WT1
ON Semiconductor
MSB1218A-RT1
ON Semiconductor
MSB92ASWT1
ON Semiconductor
MSB92WT1
ON Semiconductor
MSD42SWT1
ON Semiconductor
MSD42WT1
ON Semiconductor
2SA1774G
ON Semiconductor
2SA1774T1G
ON Semiconductor
XC4013E-2BG225I
Xilinx Inc.
XC3S200-4PQ208C
Xilinx Inc.
AGL600V2-FGG256
Microsemi Corporation
A54SX32A-2PQG208
Microsemi Corporation
A1020B-1PLG68I
Microsemi Corporation
5SGXMA5N3F40C3N
Intel
5SGXMA5H2F35C1N
Intel
LFE3-17EA-7LMG328I
Lattice Semiconductor Corporation
EP1C12F324I7
Intel
EPF10K100ARC240-3N
Intel