Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / NJVMJD112T4G
Manufacturer Part Number | NJVMJD112T4G |
---|---|
Future Part Number | FT-NJVMJD112T4G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NJVMJD112T4G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 20W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NJVMJD112T4G Weight | Contact Us |
Replacement Part Number | NJVMJD112T4G-FT |
SBC847CWT1G
ON Semiconductor
SMMBT3906WT1G
ON Semiconductor
BC846BWT1G
ON Semiconductor
SMMBTA06WT1G
ON Semiconductor
BC807-40WT1G
ON Semiconductor
NSVBC817-40WT1G
ON Semiconductor
NSVBC857CWT1G
ON Semiconductor
SMMBTA56WT1G
ON Semiconductor
BC847BWT1G
ON Semiconductor
MMBT2222AWT1G
ON Semiconductor
LFE2-12SE-7TN144C
Lattice Semiconductor Corporation
XC2V80-4FGG256I
Xilinx Inc.
XCKU035-L1FBVA676I
Xilinx Inc.
A54SX32A-PQ208I
Microsemi Corporation
APA600-PQ208M
Microsemi Corporation
5SGXMA7N2F40I2LN
Intel
XC2VP20-5FFG896I
Xilinx Inc.
EP3CLS70F780C8N
Intel
EPF6016QC208-3N
Intel
EP1SGX40GF1020C7
Intel