Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / NGTD21T65F2WP
Manufacturer Part Number | NGTD21T65F2WP |
---|---|
Future Part Number | FT-NGTD21T65F2WP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NGTD21T65F2WP Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | - |
Current - Collector Pulsed (Icm) | 200A |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 45A |
Power - Max | - |
Switching Energy | - |
Input Type | Standard |
Gate Charge | - |
Td (on/off) @ 25°C | - |
Test Condition | - |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NGTD21T65F2WP Weight | Contact Us |
Replacement Part Number | NGTD21T65F2WP-FT |
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