Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NESG2107M33-A
Manufacturer Part Number | NESG2107M33-A |
---|---|
Future Part Number | FT-NESG2107M33-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NESG2107M33-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5V |
Frequency - Transition | 10GHz |
Noise Figure (dB Typ @ f) | 0.9dB ~ 1.5dB @ 2GHz |
Gain | 7dB ~ 10dB |
Power - Max | 130mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 140 @ 5mA, 1V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | 3-SuperMiniMold (M33) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NESG2107M33-A Weight | Contact Us |
Replacement Part Number | NESG2107M33-A-FT |
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