Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE85639R-T1
Manufacturer Part Number | NE85639R-T1 |
---|---|
Future Part Number | FT-NE85639R-T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE85639R-T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 9GHz |
Noise Figure (dB Typ @ f) | 1.5dB ~ 2.1dB @ 1GHz |
Gain | 13.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-143R |
Supplier Device Package | SOT-143R |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE85639R-T1 Weight | Contact Us |
Replacement Part Number | NE85639R-T1-FT |
BFS17,215
NXP USA Inc.
BFS17,235
NXP USA Inc.
BFS17A,215
NXP USA Inc.
BFS17A,235
NXP USA Inc.
BFT92,215
NXP USA Inc.
BFT93,215
NXP USA Inc.
PBR941B,215
NXP USA Inc.
PBR951,215
NXP USA Inc.
BFG198,115
NXP USA Inc.
BFG591,115
NXP USA Inc.
A54SX32A-1TQ144M
Microsemi Corporation
XC3S4000-5FGG900C
Xilinx Inc.
M1A3PE1500-2PQ208
Microsemi Corporation
EP4CE22F17A7N
Intel
5SEE9F45C2L
Intel
5SGXMA7K3F35I4N
Intel
XA6SLX16-3CSG324Q
Xilinx Inc.
A3P250-1FGG144
Microsemi Corporation
A54SX08A-FFGG144
Microsemi Corporation
LFE2M35SE-5F484C
Lattice Semiconductor Corporation