Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE85639R-T1
Manufacturer Part Number | NE85639R-T1 |
---|---|
Future Part Number | FT-NE85639R-T1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE85639R-T1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 9GHz |
Noise Figure (dB Typ @ f) | 1.5dB ~ 2.1dB @ 1GHz |
Gain | 13.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-143R |
Supplier Device Package | SOT-143R |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE85639R-T1 Weight | Contact Us |
Replacement Part Number | NE85639R-T1-FT |
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