Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE85633-R23-A
Manufacturer Part Number | NE85633-R23-A |
---|---|
Future Part Number | FT-NE85633-R23-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE85633-R23-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 7GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
Gain | 11.5dB |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 10V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE85633-R23-A Weight | Contact Us |
Replacement Part Number | NE85633-R23-A-FT |
NE67818-A
CEL
NE67818-T1-A
CEL
NE68018-A
CEL
NE68018-T1-A
CEL
NE68118-A
CEL
NE68118-T1-A
CEL
NE68518-A
CEL
NE68518-T1-A
CEL
NE85618-A
CEL
NE85618-T1-A
CEL
XC6SLX100T-3CSG484C
Xilinx Inc.
XA3S1200E-4FTG256I
Xilinx Inc.
XA6SLX25-2FTG256Q
Xilinx Inc.
M2GL090TS-FCSG325I
Microsemi Corporation
M1A3P1000-1FG256I
Microsemi Corporation
A54SX72A-2PQ208
Microsemi Corporation
EP20K600EFC672-1XN
Intel
5SGXEB6R3F40I4N
Intel
10AX027E2F27E2LG
Intel
LCMXO640C-4BN256C
Lattice Semiconductor Corporation