Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE85630-T1-A
Manufacturer Part Number | NE85630-T1-A |
---|---|
Future Part Number | FT-NE85630-T1-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE85630-T1-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
Gain | 9dB |
Power - Max | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 7mA, 3V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | SOT-323 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE85630-T1-A Weight | Contact Us |
Replacement Part Number | NE85630-T1-A-FT |
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