Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE851M33-T3-A
Manufacturer Part Number | NE851M33-T3-A |
---|---|
Future Part Number | FT-NE851M33-T3-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE851M33-T3-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz |
Gain | - |
Power - Max | 130mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 1V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | 3-SuperMiniMold (M33) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE851M33-T3-A Weight | Contact Us |
Replacement Part Number | NE851M33-T3-A-FT |
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