Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE851M33-A
Manufacturer Part Number | NE851M33-A |
---|---|
Future Part Number | FT-NE851M33-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE851M33-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz |
Gain | - |
Power - Max | 130mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 1V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | 3-SuperMiniMold (M33) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE851M33-A Weight | Contact Us |
Replacement Part Number | NE851M33-A-FT |
MS1579
Microsemi Corporation
MS1612
Microsemi Corporation
MS1701
Microsemi Corporation
MS1801
Microsemi Corporation
MS2091H
Microsemi Corporation
MS2092H
Microsemi Corporation
MS2200
Microsemi Corporation
MS2200A
Microsemi Corporation
MS2201
Microsemi Corporation
MS2202
Microsemi Corporation
AGLN030V5-ZVQ100I
Microsemi Corporation
EP20K200CF672C7
Intel
EP1AGX50CF484I6N
Intel
5SGXMA5N3F40C4N
Intel
5SGXEA7H2F35I3L
Intel
M2GL090-FGG676
Microsemi Corporation
A3P600-FGG144I
Microsemi Corporation
A3P600L-1FGG144
Microsemi Corporation
LFEC20E-4F484C
Lattice Semiconductor Corporation
EPF6016BC256-3
Intel