Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE851M33-A
Manufacturer Part Number | NE851M33-A |
---|---|
Future Part Number | FT-NE851M33-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE851M33-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 5.5V |
Frequency - Transition | 4.5GHz |
Noise Figure (dB Typ @ f) | 1.9dB ~ 2.5dB @ 2GHz |
Gain | - |
Power - Max | 130mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 1V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Leads |
Supplier Device Package | 3-SuperMiniMold (M33) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE851M33-A Weight | Contact Us |
Replacement Part Number | NE851M33-A-FT |
MS1579
Microsemi Corporation
MS1612
Microsemi Corporation
MS1701
Microsemi Corporation
MS1801
Microsemi Corporation
MS2091H
Microsemi Corporation
MS2092H
Microsemi Corporation
MS2200
Microsemi Corporation
MS2200A
Microsemi Corporation
MS2201
Microsemi Corporation
MS2202
Microsemi Corporation
A1415A-PQG100C
Microsemi Corporation
A42MX36-2PQG240I
Microsemi Corporation
A3PN250-VQG100I
Microsemi Corporation
EP20K200CF672C7ES
Intel
5AGXMA7D4F27C4N
Intel
EP3SL150F1152C4
Intel
EP3SL200F1152C4N
Intel
EP4SGX530HH35C3NES
Intel
LFE2-6SE-7F256C
Lattice Semiconductor Corporation
LCMXO1200C-3M132I
Lattice Semiconductor Corporation