Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE685M13-A
Manufacturer Part Number | NE685M13-A |
---|---|
Future Part Number | FT-NE685M13-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE685M13-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 6V |
Frequency - Transition | 12GHz |
Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 2GHz |
Gain | - |
Power - Max | 140mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
Current - Collector (Ic) (Max) | 30mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-3 |
Supplier Device Package | M13 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE685M13-A Weight | Contact Us |
Replacement Part Number | NE685M13-A-FT |
MS1076
Microsemi Corporation
MS1076A
Microsemi Corporation
MS1076C
Microsemi Corporation
MS1087T
Microsemi Corporation
MS1202
Microsemi Corporation
MS1227
Microsemi Corporation
MS1337
Microsemi Corporation
MS1406
Microsemi Corporation
MS1579
Microsemi Corporation
MS1612
Microsemi Corporation
XC3S4000-4FGG900I
Xilinx Inc.
XC6VLX75T-2FFG484I
Xilinx Inc.
A54SX16A-PQG208M
Microsemi Corporation
M1A3P400-PQ208
Microsemi Corporation
5SGXEA4K3F40I3LN
Intel
AGL125V2-FG144
Microsemi Corporation
LCMXO3L-4300E-5MG121C
Lattice Semiconductor Corporation
10M02SCM153C8G
Intel
EP3CLS70F780C7
Intel
EPF10K100EQC240-1
Intel