Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE662M04-T2-A
Manufacturer Part Number | NE662M04-T2-A |
---|---|
Future Part Number | FT-NE662M04-T2-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE662M04-T2-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 3.3V |
Frequency - Transition | 25GHz |
Noise Figure (dB Typ @ f) | 1.1dB @ 2GHz |
Gain | 18dB |
Power - Max | 115mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 2V |
Current - Collector (Ic) (Max) | 35mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-343F |
Supplier Device Package | SOT-343F |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE662M04-T2-A Weight | Contact Us |
Replacement Part Number | NE662M04-T2-A-FT |
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