Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / NE58219-T1-A
Manufacturer Part Number | NE58219-T1-A |
---|---|
Future Part Number | FT-NE58219-T1-A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NE58219-T1-A Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 12V |
Frequency - Transition | 5GHz |
Noise Figure (dB Typ @ f) | - |
Gain | - |
Power - Max | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
Current - Collector (Ic) (Max) | 60mA |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | 3-SuperMiniMold (19) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NE58219-T1-A Weight | Contact Us |
Replacement Part Number | NE58219-T1-A-FT |
BFR 380T E6327
Infineon Technologies
BFR 949T E6327
Infineon Technologies
MMBTH10-7
Diodes Incorporated
MMBTH24-7
Diodes Incorporated
BFU550R
NXP USA Inc.
BFP183E7764HTSA1
Infineon Technologies
BFP193E6327HTSA1
Infineon Technologies
BFU520R
NXP USA Inc.
BFU520XAR
NXP USA Inc.
BFU530R
NXP USA Inc.
A54SX08A-1TQ144I
Microsemi Corporation
XC6SLX45-3FG676C
Xilinx Inc.
A40MX04-1PLG68
Microsemi Corporation
A1415A-VQG100C
Microsemi Corporation
EP3SE260F1517C4L
Intel
5SGXMB9R3H43C2LN
Intel
5SGXMA9K2H40C3N
Intel
A42MX09-1PQG160I
Microsemi Corporation
10AX115N4F45E3SG
Intel
EP1S40F1020C7N
Intel