Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / NCV1413BDR2G
Manufacturer Part Number | NCV1413BDR2G |
---|---|
Future Part Number | FT-NCV1413BDR2G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NCV1413BDR2G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 7 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 16-SOIC |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NCV1413BDR2G Weight | Contact Us |
Replacement Part Number | NCV1413BDR2G-FT |
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